Difference Between BS170 N-Channel MOSFET vs 2N7000 N-Channel MOSFET [Video&FAQ]

April 15, 2022

The 2N7000 and BS170 are two N-channel enhancement-mode MOSFETs with differing lead configurations and current ratings that are utilized for low-power switching applications. Other variations 2N7002, VQ1000J, and VQ1000P are sometimes listed together on the same datasheet. But what is the difference between the two of them? This article will answer your questions and show you their similarities and differences, as well as their interchangeability.
What is a BS170 N-Channel MOSFET?
In a TO-92 packaging, the BS170 is a well-known N-channel MOSFET. This device was made with Fairchild’s unique high-density DMOS cell technology.
This ultra-high-density technology is intended to lower state resistance while providing stable, reliable, and fast switching.
It has the ability to switch as well as amplify. When used as a switch, it can drive a load of 500mA. It has quick switching capabilities and can switch loads in about 7 nanoseconds, making it suitable for use in high-speed circuits.
It can also work at low voltages, making it a good MOSFET for battery-powered applications. It can also be used as an amplifier, and it can be used in audio amplifier circuits as well as other signal amplification applications.
The BS170 is well suited for low voltage and low current applications such as tiny servo motor control, power MOSFET gate drivers, and other switching applications.
What is a 2N7000 N-Channel MOSFET?
The 2N7000 is a Fairchild DMOS technology N-channel enhancement mode Field-Effect Transistor with a high cell density. This high-density technique was designed to reduce on-state resistance while delivering long-lasting, dependable, and fast switching performance. It can deliver up to 2A of pulsed current and is suitable for most applications that require up to 400mA DC.
BS170 vs 2N7000 Features Comparison
BS170 Features
• Pb-Free device
• Low offset and error voltage
• Easily driven without buffer
• High density cell design to minimize ON-state resistance RDS(ON)
• Voltage controlled small signal switch
• Particularly suits for low voltage, low current application
• High saturation current capability
• Rugged and Reliable
• Fast switching (TON = 4ns)
2N7000 Features
• Small signal N-Channel MOSFET
• Drain-Source Voltage (VDS) is 60V
• Continuous Drain Current (ID) is 200mA
• Pulsed Drain Current (ID-peak) is 500mA
• Gate threshold voltage (VGS-th) is 3V
• Gate-Source Voltage is (VGS) is ±20V
• Turn ON and Turn off time is 10ns each.
• Available in To-92 Package

BS170 vs 2N7000 Equivalents
BS170 Equivalents
2N7000, 2N7002, VQ1000J, VQ1000P, IRLML2502.
2N7000 Equivalents
BS170, NTE 491, IRF3205, IRF540N, IRF9Z34N, IRFP250N, IRFZ44.

BS170 vs 2N7000 Interchangeability
Both the 2N7000 and the BS170 are TO-92 devices that operate at 60 V. The 2N7000 can switch up to 200 mA. The BS170 can switch 500 mA with a maximum on-resistance of 5 at 10 V Vgs. The 2N7002 is a similar part to the 2N7000, although it comes in a different package.
The 2N7000 and BS170 MOSFETs are the most similar devices since their voltage specs, such as terminal voltage and threshold voltage values, are identical.
However, the BS170 has a higher load capability than the 2N7000 in terms of current parameters; its power dissipation is twice that of the 2N7000.
Links: https://www.utmel.com/components/difference-between-bs170-n-channel-mosfet-vs-2n7000-n-channel-mosfet-video-faq?id=1840

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